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2024 | OriginalPaper | Buchkapitel

A DC-50 GHz SPDT Switch for 5G Wireless Applications

verfasst von : Mfonobong Uko, Sunday Cookey Ekpo, Fanuel Elias, Dipankar Saha, Swarnadipto Ghosh, Muhammad Ijaz, Samik Chakraborty, Andrew Gibson

Erschienen in: The Second International Adaptive and Sustainable Science, Engineering and Technology Conference

Verlag: Springer Nature Switzerland

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Abstract

A broadband high-isolation single pole double throw (SPDT) switch based on a 0.15 μm gate length indium gallium arsenide (InGaAs) pseudomorphic high electron transistor (pHEMT) is reported. The SPDT switch is composed of four shunt-stacked FET units on each branch with two FETs in series for increased voltage handling capability. The switch is designed to operate at the frequency range of DC-50 GHz with less than 3 dB insertion loss and more than 40 dB isolation, for X-band and K/Ka band frequency applications.

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Metadaten
Titel
A DC-50 GHz SPDT Switch for 5G Wireless Applications
verfasst von
Mfonobong Uko
Sunday Cookey Ekpo
Fanuel Elias
Dipankar Saha
Swarnadipto Ghosh
Muhammad Ijaz
Samik Chakraborty
Andrew Gibson
Copyright-Jahr
2024
DOI
https://doi.org/10.1007/978-3-031-53935-0_9